tic106 series silicon controlled rectifiers
1 april 1971 - revised september 2002 specifications are subject to change without notice. 5 a continuous on-state current 30 a surge-current glass passivated wafer 400 v to 800 v off-state voltage max i gt of 200 a absolute maximum ratings over operating case temperature (unless otherwise noted) notes: 1. these values apply when the gate-cathode resistance r gk = 1 k ? . 2. these values apply for continuous dc operation with resistive load. above 80c derate linearly to zero at 110c. 3. this value may be applied continuously under single phase 50 hz half-sine-wave operation with r esistive load. above 80c derate linearly to zero at 110c. 4. this value applies for one 50 hz half-sine-wave when the device is operating at (or below) the rated value of peak reve rse volta ge and on-state current. surge may be repeated after the device has returned to original ther mal eq uilibrium. 5. this value applies for a maxi mum averaging time of 20 ms. rating symbol value unit repetitive peak off-state voltage (see note 1) TIC106D tic106m tic106s tic106n v drm 400 600 700 800 v repetitive peak reverse voltage TIC106D tic106m tic106s tic106n v rrm 400 600 700 800 v continuous on-state current at (or below) 80c case temperature (see note 2) i t(rms) 5a average on-state current (180 conduction angle) at (or below) 80c case temperature (see note 3) i t(av) 3.2 a surge on-state current at (or below) 25c (see note 4) i tsm 30 a peak positive gate current (pulse width 300 s) i gm 0.2 a peak gate power dissipation (pulse width 300 s) p gm 1.3 w average gate power dissipation (see note 5) p g(av) 0.3 w operating case temperature range t c -40 to +110 c storage temperature range t stg -40 to +125 c lead temperature 1.6 mm from case for 10 seconds t l 230 c k a g to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdc1aca 1 2 3
tic106 series silicon controlled rectifiers 2
april 1971 - revised september 2002 specifications are subject to change without notice. note 6: this parameter must be measured using pulse techniques, t p = 300 s, duty cycle 2 %. voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = rated v drm r gk = 1 k ? t c = 110c 400 a i rrm repetitive peak reverse current v r = rated v rrm i g = 0 t c = 110c 1 ma i gt gate trigger current v aa = 12 v r l = 100 ? t p(g) 20 s 5 200 a v gt gate trigger voltage v aa = 12 v t p(g) 20 s r l = 100 ? r gk =1k ? t c = - 40c 1.2 v v aa = 12 v t p(g) 20 s r l = 100 ? r gk =1k ? 0.4 0.6 1 v aa = 12 v t p(g) 20 s r l = 100 ? r gk =1k ? t c = 110c 0.2 i h holding current v aa = 12 v initiating i t = 10 ma r gk =1k ? t c = - 40c 8 ma v aa = 12 v initiating i t = 10 ma r gk =1k ? 5 v t peak on-state voltage i t = 5 a (see note 6) 1.7 v dv/dt critical rate of rise of off-state voltage v d = rated v d r gk =1k ? t c = 110c 10 v/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 3.5 c/w r ja junction to free air thermal resist ance 62.5 c/w
tic106 series silicon controlled rectifiers 3
april 1971 - revised september 2002 specifications are subject to change without notice. thermal information figure 1. figure 2. figure 3. figure 4. average anode on-state current t c - case temperature - c 30 40 50 60 70 80 90 100 110 i t(av) - maximum average anode forward current - a 0 1 2 3 4 5 6 ti20aa derating curve = 180o continuous dc conduction angle 0 180 anode power dissipated i t - on-state current - a 110100 p a - anode power dissipated - w 1 10 100 ti20ab on-state current vs t j = 110c surge on-state current consecutive 50 hz half-sine-wave cycles 110100 i tm - peak half-sine-wave current - a 1 10 100 ti20ac cycles of current duration vs t c 80 c no prior device conduction gate control guaranteed transient thermal resistance consecutive 50 hz half-sine-wave cycles 110100 r jc(t) - transient thermal resistance - c/w 01 1 10 ti20ad cycles of current duration vs
tic106 series silicon controlled rectifiers 4
april 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 5. figure 6. figure 7. gate trigger voltage t c - case temperature - c -50-25 0 255075100125 v gt - gate trigger voltage - v 02 04 06 08 0 1 tc20ab case temperature vs v aa = 12 v r l = 100 ? r gk = 1 k ? t p(g) 20 s holding current t c - case temperature - c -50 -25 0 25 50 75 100 125 i h - h o ldi ng c urren t - m a 0.1 1 10 tc20ad case temperature vs v aa = 12 v r gk = 1 k ? initiating i t = 10 ma peak on-state voltage i tm - peak on-state current - a 01 1 10 v tm - peak on-state voltage - v 0.0 0.5 1.0 1.5 2.0 2.5 tc20ae vs peak on-state current t c = 25 c t p = 300 s duty cycle 2 %
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